Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12052074Application Date: 2008-03-20
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Publication No.: US07932597B2Publication Date: 2011-04-26
- Inventor: Makoto Terui , Yasushi Shiraishi
- Applicant: Makoto Terui , Yasushi Shiraishi
- Applicant Address: JP Tokyo
- Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Volentine & Whitt, P.L.L.C.
- Priority: JP2007-081852 20070327
- Main IPC: H01L23/498
- IPC: H01L23/498

Abstract:
A BGA substrate which has a back surface to which a heat radiating plate is attached and an opening for accommodating a relay wiring substrate therein, which is provided in the center of its surface, is used. The relay wiring substrate to which an ASIC chip and a memory chip are flip-chip connected, is bonded to the heat radiating plate in the opening with a thermal conductive bonding material. Further, each of the back surfaces of the ASIC chip and the memory chip is connected to a metal cap for sealing the opening through a thermal conductive material interposed therebetween.
Public/Granted literature
- US20080237846A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2008-10-02
Information query
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