Invention Grant
- Patent Title: Interconnect structure for a semiconductor device
- Patent Title (中): 半导体器件的互连结构
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Application No.: US12413164Application Date: 2009-03-27
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Publication No.: US07932613B2Publication Date: 2011-04-26
- Inventor: Craig Child
- Applicant: Craig Child
- Applicant Address: KY Grand Cayman
- Assignee: GlobalFoundries Inc.
- Current Assignee: GlobalFoundries Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H01L23/488
- IPC: H01L23/488 ; H01L21/4763 ; H01L23/48
Abstract:
A semiconductor device having a device substrate is provided. The semiconductor device includes an electrically-conductive pad formed overlying the device substrate, and an electrically-conductive platform formed overlying the electrically-conductive pad and enclosing a cavity. The electrically-conductive platform has a perimeter portion extending away from the electrically-conductive pad and a capping portion atop the perimeter portion. The semiconductor device also includes a cushioning material disposed in the cavity.
Public/Granted literature
- US20100244267A1 INTERCONNECT STRUCTURE FOR A SEMICONDUCTOR DEVICE AND RELATED METHOD OF MANUFACTURE Public/Granted day:2010-09-30
Information query
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