Invention Grant
- Patent Title: Apparatus for detecting defect by examining electric characteristics of a semiconductor device
- Patent Title (中): 通过检查半导体器件的电特性来检测缺陷的装置
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Application No.: US12370915Application Date: 2009-02-13
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Publication No.: US07932733B2Publication Date: 2011-04-26
- Inventor: Masahiro Sasajima , Hiroyuki Suzuki
- Applicant: Masahiro Sasajima , Hiroyuki Suzuki
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2008-035242 20080215
- Main IPC: G01R31/00
- IPC: G01R31/00 ; G01R31/10

Abstract:
An exemplary apparatus for detecting defect is capable of measuring temperature characteristics of a semiconductor sample without restrictions in the movement range of a sample stage and a probe device by a temperature control device. A heater heats a sample stage, and the sample stage is cooled by a refrigerant contained in a refrigerant container through a heat transfer line connected to the sample stage, a first heat receiving portion connected to the heat transfer line, a second heat receiving portion that is detachable from the heat receiving portion, a heat transfer line connected to the heat receiving portion, and a heat transfer rod connected to the heat transfer line, thereby adjusting the temperature of a semiconductor sample held by the sample stage. The heat receiving portions are separated from each other to release the restriction of the sample stage and a probe device such that the sample stage and the, probe device can be moved in a sample chamber.
Public/Granted literature
- US20090224788A1 APPARATUS FOR DETECTING DEFECT Public/Granted day:2009-09-10
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