Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12563200Application Date: 2009-09-21
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Publication No.: US07932771B2Publication Date: 2011-04-26
- Inventor: Tomoyuki Kameda
- Applicant: Tomoyuki Kameda
- Applicant Address: JP Tokyo
- Assignee: Mitsumi Electric Co., Ltd
- Current Assignee: Mitsumi Electric Co., Ltd
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JP2008-278720 20081029
- Main IPC: G05F1/10
- IPC: G05F1/10

Abstract:
A semiconductor device includes a semiconductor element including a current mirror circuit, a parasitic resistance formed at the current mirror circuit, and a connection terminal electrically connected to a part of the current mirror circuit via an electric conductor including a bonding wire, the connection terminal being configured to perform input and output relative to an outside of the semiconductor device; wherein a resistance value of the bonding wire is controlled so that a shift of an output electric current of the current mirror circuit based on the parasitic resistance is corrected.
Public/Granted literature
- US20100102874A1 SEMICONDUCTOR DEVICE Public/Granted day:2010-04-29
Information query
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