Invention Grant
- Patent Title: Resonant operating mode for a transistor
- Patent Title (中): 晶体管的谐振工作模式
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Application No.: US12220613Application Date: 2008-07-25
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Publication No.: US07932783B2Publication Date: 2011-04-26
- Inventor: Larry A. Park
- Applicant: Larry A. Park
- Agency: Chernoff, Vilhauer, McClung & Stenzel
- Main IPC: H03F3/04
- IPC: H03F3/04
Abstract:
The PN junctions of a transistor are biased for operation in the active mode but an initial flow of current reverses the bias of the base-emitter junction causing the transistor to conduct a resonant current with a voltage less than the forward junction voltage of said base-emitter.
Public/Granted literature
- US20100019350A1 Resonant operating mode for a transistor Public/Granted day:2010-01-28
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