A switching element driving device has a first transistor that decreases the gate voltage of a power element at a faster rate than during a normal turn-off, and a second transistor that decreases the gate voltage of the power element at a slower rate than during a normal turn-off. If the gate voltage detected by the gate voltage monitoring means when an overcurrent in the power element is detected by overcurrent detection means is greater than a predetermined value, the gate voltage is decreased by the first transistor, and then, while the power element remains on, the gate voltage is decreased by the second transistor. If the gate voltage detected by the gate voltage monitoring means when an overcurrent in the power element is detected by overcurrent detection means is less than or equal to the predetermined value, the gate voltage is decreased only by the second transistor.