Invention Grant
US07933136B2 Non-volatile memory cell with multiple resistive sense elements sharing a common switching device
有权
具有多个电阻感测元件的非易失性存储单元共享公共的开关器件
- Patent Title: Non-volatile memory cell with multiple resistive sense elements sharing a common switching device
- Patent Title (中): 具有多个电阻感测元件的非易失性存储单元共享公共的开关器件
-
Application No.: US12424065Application Date: 2009-04-15
-
Publication No.: US07933136B2Publication Date: 2011-04-26
- Inventor: Andrew John Carter , Maroun Georges Khoury , Yong Lu , Roger Glenn Rolbiecki
- Applicant: Andrew John Carter , Maroun Georges Khoury , Yong Lu , Roger Glenn Rolbiecki
- Applicant Address: US CA Scotts Valley
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Scotts Valley
- Agency: Fellers, Snider, et al.
- Main IPC: G11C5/06
- IPC: G11C5/06
Abstract:
A non-volatile memory cell array and associated method of use. In accordance with various embodiments, the array includes a plurality of programmable resistive sense elements (RSEs) coupled to a shared switching device. The switching device has a common source region and multiple drain regions, each drain region connected to an associated RSE from said plurality of RSEs.
Public/Granted literature
- US20100118589A1 Non-Volatile Memory Cell with Multiple Resistive Sense Elements Sharing a Common Switching Device Public/Granted day:2010-05-13
Information query
