Invention Grant
- Patent Title: Capacitorless DRAM and methods of operating the same
- Patent Title (中): 无电容DRAM及其操作方法
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Application No.: US12010482Application Date: 2008-01-25
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Publication No.: US07933143B2Publication Date: 2011-04-26
- Inventor: Young-gu Jin , Ki-ha Hong , Yoon-dong Park
- Applicant: Young-gu Jin , Ki-ha Hong , Yoon-dong Park
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2007-0075909 20070727
- Main IPC: G11C11/24
- IPC: G11C11/24
Abstract:
A capacitorless DRAM and methods of manufacturing and operating the same are provided. The capacitorless DRAM includes a source, a drain and a channel layer, formed on a substrate. A charge reserving layer is formed on the channel layer. The capacitorless DRAM includes a gate that contacts the channel layer and the charge reserving layer.
Public/Granted literature
- US20090026519A1 Capacitorless dram and methods of manufacturing and operating the same Public/Granted day:2009-01-29
Information query
