Invention Grant
- Patent Title: Semiconductor laser diode and optical module employing the same
- Patent Title (中): 半导体激光二极管和采用其的光模块
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Application No.: US11705406Application Date: 2007-02-13
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Publication No.: US07933304B2Publication Date: 2011-04-26
- Inventor: Masahiro Aoki
- Applicant: Masahiro Aoki
- Applicant Address: JP Kanagawa
- Assignee: Opnext Japan, Inc.
- Current Assignee: Opnext Japan, Inc.
- Current Assignee Address: JP Kanagawa
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2006-337384 20061214
- Main IPC: H01S3/08
- IPC: H01S3/08

Abstract:
It is an object of the present invention to realize a low cost laser light source capable of emitting several mW optical power while the operation current is reduced. In particular, the present invention concerns a 1.3 μm wavelength band laser device suitable for several to several ten km short distance fiber optic transmission and also a less power consuming optical communication module in which such a laser is preferably mounted. As a laser structure which eliminates the necessity of adding an optical isolator by providing improved immunity to reflected light while lowering the operation current for less power consumption and not lowering the response speed, a short cavity laser which operates in multiple longitudinal modes is introduced. Especially, an angled mirror structure is formed at the laser's emitting edge to change the optical output direction so that the light is emitted from the top or bottom of the substrate.
Public/Granted literature
- US20080144682A1 Semiconductor laser diode and optical module employing the same Public/Granted day:2008-06-19
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