Invention Grant
- Patent Title: Flash memory storage device for adjusting efficiency in accessing flash memory
- Patent Title (中): 闪存存储设备，用于调整访问闪存的效率
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Application No.: US12103863Application Date: 2008-04-16
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Publication No.: US07934053B2Publication Date: 2011-04-26
- Inventor: Ju-peng Chen , Nei-chiung Perng
- Applicant: Ju-peng Chen , Nei-chiung Perng
- Applicant Address: TW Shindian
- Assignee: Genesys Logic, Inc.
- Current Assignee: Genesys Logic, Inc.
- Current Assignee Address: TW Shindian
- Agency: Kirton & McConkie
- Agent Evan R. Witt
- Priority: TW97104935A 20080213
- Main IPC: G06F12/00
- IPC: G06F12/00
Abstract:
A flash memory storage device for boosting efficiency in accessing flash memory is disclosed. The flash memory storage device provides a Multi-level cell (MLC) flash memory for storing data, a single-level cell (SLC) flash memory for storing data, and a control unit for determining whether to store a file into the MLC NAND flash memory or a SLC NAND flash memory based on the file's data characteristics.
Public/Granted literature
- US20090204746A1 FLASH MEMORY STORAGE DEVICE FOR ADJUSTING EFFICIENCY IN ACCESSING FLASH MEMORY Public/Granted day:2009-08-13
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