Invention Grant
- Patent Title: Film forming system and film forming method
- Patent Title (中): 成膜系统和成膜方法
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Application No.: US11229841Application Date: 2005-09-20
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Publication No.: US07935185B2Publication Date: 2011-05-03
- Inventor: Shinji Miyazaki , Hiroki Fukushima
- Applicant: Shinji Miyazaki , Hiroki Fukushima
- Applicant Address: JP Tokyo JP Tokyo-To
- Assignee: Kabushiki Kaisha Toshiba,Tokyo Electron Limited
- Current Assignee: Kabushiki Kaisha Toshiba,Tokyo Electron Limited
- Current Assignee Address: JP Tokyo JP Tokyo-To
- Agency: Smith, Gambrell & Russell, LLP
- Priority: JP2004-272996 20040921
- Main IPC: C23C16/00
- IPC: C23C16/00 ; F27D3/12

Abstract:
A clean gas circulates to pass through a loading area provided below a vertical heat treatment furnace. The clean gas unidirectionally flows through the loading area. After completion of wafer processing, a wafer boat lowers from the heat treatment furnace to the loading area, where the wafers are removed from the wafer boat. Subsequently, a clean gas jetting nozzle arranged in the loading area jets a clean gas toward the emptied wafer boat. Fragment of thin film which may readily peel off are blown away from the wafer boat, and are discharged out of the loading area together with the unidirectional flow. Thus, it is possible to avoid wafer contamination due to the unexpected peel-off of thin film fragments from the wafer boat.
Public/Granted literature
- US20060081181A1 Film forming system and film forming method Public/Granted day:2006-04-20
Information query
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