Invention Grant
- Patent Title: Plasma processing apparatus
- Patent Title (中): 等离子体处理装置
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Application No.: US11441290Application Date: 2006-05-24
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Publication No.: US07935186B2Publication Date: 2011-05-03
- Inventor: Qing Qian
- Applicant: Qing Qian
- Applicant Address: KY George Town, Grand Cayman
- Assignee: Advanced Micro-Fabrication Equipment, Inc. Asia
- Current Assignee: Advanced Micro-Fabrication Equipment, Inc. Asia
- Current Assignee Address: KY George Town, Grand Cayman
- Agency: Nixon Peabody LLP.
- Agent Joseph Bach, Esq.
- Priority: CN200510028567 20050805
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C23F1/00 ; H01L21/306
Abstract:
A plasma processing apparatus is described and which includes a chamber having at least two processing stations which are separated by a wall. At least one channel is formed in the wall, and wherein the channel has a width to length ratio of less than about 1:3.
Public/Granted literature
- US20070028840A1 Plasma processing apparatus Public/Granted day:2007-02-08
Information query
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