Invention Grant
US07935232B2 Sputtering apparatus and method, and sputtering control program 失效
溅射装置和方法以及溅射控制程序

  • Patent Title: Sputtering apparatus and method, and sputtering control program
  • Patent Title (中): 溅射装置和方法以及溅射控制程序
  • Application No.: US11628138
    Application Date: 2005-06-13
  • Publication No.: US07935232B2
    Publication Date: 2011-05-03
  • Inventor: Shunji Kuroiwa
  • Applicant: Shunji Kuroiwa
  • Applicant Address: JP Kanagawa
  • Assignee: Shibaura Mechatronics Corporation
  • Current Assignee: Shibaura Mechatronics Corporation
  • Current Assignee Address: JP Kanagawa
  • Priority: JP2004-175016 20040614
  • International Application: PCT/JP2005/010772 WO 20050613
  • International Announcement: WO2005/121392 WO 20051222
  • Main IPC: C23C14/35
  • IPC: C23C14/35
Sputtering apparatus and method, and sputtering control program
Abstract:
To provide a sputtering apparatus and method, and a sputtering control program which are configured simply and can secure the uniformity of the film thickness from the beginning to the end of the use of a target.There are provided: a target 15 disposed so as to face an object to be treated 19; a permanent magnet unit M which generates a high-density plasma by means of a magnetic field and deposits a material of the target 15 on the object to be treated, in the form of a film; a rotational mechanism 9 which rotates the permanent magnet unit M; and a rotation number control apparatus 7 which gradually changes the number of rotations of the permanent magnet unit M rotated by the rotational mechanism 9. The rotation number control apparatus 7 has a rotation number setting section 702b for setting the number of rotations to be switched, a switching time setting section 702a for setting the time for switching, a detection section 703 for detecting the switching time, a selecting section 704 for selecting the number of rotations at the switching time, and a switching section 705 for outputting an instruction of switching to the selected number of rotations.
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