Invention Grant
- Patent Title: Sputtering apparatus and method, and sputtering control program
- Patent Title (中): 溅射装置和方法以及溅射控制程序
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Application No.: US11628138Application Date: 2005-06-13
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Publication No.: US07935232B2Publication Date: 2011-05-03
- Inventor: Shunji Kuroiwa
- Applicant: Shunji Kuroiwa
- Applicant Address: JP Kanagawa
- Assignee: Shibaura Mechatronics Corporation
- Current Assignee: Shibaura Mechatronics Corporation
- Current Assignee Address: JP Kanagawa
- Priority: JP2004-175016 20040614
- International Application: PCT/JP2005/010772 WO 20050613
- International Announcement: WO2005/121392 WO 20051222
- Main IPC: C23C14/35
- IPC: C23C14/35

Abstract:
To provide a sputtering apparatus and method, and a sputtering control program which are configured simply and can secure the uniformity of the film thickness from the beginning to the end of the use of a target.There are provided: a target 15 disposed so as to face an object to be treated 19; a permanent magnet unit M which generates a high-density plasma by means of a magnetic field and deposits a material of the target 15 on the object to be treated, in the form of a film; a rotational mechanism 9 which rotates the permanent magnet unit M; and a rotation number control apparatus 7 which gradually changes the number of rotations of the permanent magnet unit M rotated by the rotational mechanism 9. The rotation number control apparatus 7 has a rotation number setting section 702b for setting the number of rotations to be switched, a switching time setting section 702a for setting the time for switching, a detection section 703 for detecting the switching time, a selecting section 704 for selecting the number of rotations at the switching time, and a switching section 705 for outputting an instruction of switching to the selected number of rotations.
Public/Granted literature
- US20080023318A1 Sputtering Apparatus and Method, and Sputtering Control Program Public/Granted day:2008-01-31
Information query
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