Invention Grant
US07935266B2 Wet etching method using ultraviolet-light and method of manufacturing semiconductor device
有权
使用紫外光的湿式蚀刻方法和制造半导体器件的方法
- Patent Title: Wet etching method using ultraviolet-light and method of manufacturing semiconductor device
- Patent Title (中): 使用紫外光的湿式蚀刻方法和制造半导体器件的方法
-
Application No.: US11964794Application Date: 2007-12-27
-
Publication No.: US07935266B2Publication Date: 2011-05-03
- Inventor: Satoshi Kume , Nobuyuki Hishinuma , Hiroshi Sugahara
- Applicant: Satoshi Kume , Nobuyuki Hishinuma , Hiroshi Sugahara
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: Renesas Electronics Corporation,Ushio Denki Kabushiki Kaisha
- Current Assignee: Renesas Electronics Corporation,Ushio Denki Kabushiki Kaisha
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: Leydig, Voit & Mayer, Ltd.
- Priority: JP2003-081776 20030325
- Main IPC: B44C1/22
- IPC: B44C1/22 ; C03C15/00 ; C03C25/68 ; C23F1/00 ; C23F3/00

Abstract:
A substrate supporting film to be etched is held on a rotating stage. Ultraviolet light having a wavelength of 200 nm or shorter radiated from first lamps irradiates the film in air, thereby removing an organic coatings from the film and making the surface of the film hydrophilic. A chemical solution is applied to the hydrophilic film while rotating the substrate. Ultraviolet light having a wavelength longer than 200 nm is radiated from second lamps and onto the film through the chemical solution.
Public/Granted literature
- US20080113518A1 WET ETCHING METHOD USING ULTRAVIOLET LIGHT AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2008-05-15
Information query