Invention Grant
- Patent Title: Imprinting of partial fields at the edge of the wafer
- Patent Title (中): 在晶片边缘印刷局部场
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Application No.: US12479437Application Date: 2009-06-05
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Publication No.: US07935292B2Publication Date: 2011-05-03
- Inventor: Sidlgata V. Sreenivasan , Byung-Jin Choi
- Applicant: Sidlgata V. Sreenivasan , Byung-Jin Choi
- Applicant Address: US TX Austin
- Assignee: Molecular Imprints, Inc.
- Current Assignee: Molecular Imprints, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: B29C59/02
- IPC: B29C59/02
Abstract:
Edge field patterning of a substrate having full fields and partial fields may include patterning using a template having multiple mesas with each mesa corresponding to a field on the substrate. Polymerizable material may be deposited solely between the template and the full fields of the substrate. A non-reactive material may be deposited between the template and partial fields of the substrate.
Public/Granted literature
- US20090283934A1 Imprinting of Partial Fields at the Edge of the Wafer Public/Granted day:2009-11-19
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