Invention Grant
US07935425B2 Insulating film material containing organic silane or organic siloxane compound, method for producing same, and semiconductor device
有权
含有有机硅烷或有机硅氧烷化合物的绝缘膜材料，其制造方法和半导体器件
- Patent Title: Insulating film material containing organic silane or organic siloxane compound, method for producing same, and semiconductor device
- Patent Title (中): 含有有机硅烷或有机硅氧烷化合物的绝缘膜材料，其制造方法和半导体器件
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Application No.: US10536352Application Date: 2003-11-28
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Publication No.: US07935425B2Publication Date: 2011-05-03
- Inventor: Daiji Hara , Keisuke Yoshida
- Applicant: Daiji Hara , Keisuke Yoshida
- Applicant Address: JP Yamaguchi-ken
- Assignee: Tosoh Corporation
- Current Assignee: Tosoh Corporation
- Current Assignee Address: JP Yamaguchi-ken
- Agency: Sughrue Mion, PLLC
- Priority: JP2002346226 20021128; JP2003198654 20030717
- International Application: PCT/JP03/15281 WO 20031128
- International Announcement: WO2004/049422 WO 20040610
- Main IPC: B32B9/04
- IPC: B32B9/04 ; C23C16/40
Abstract:
A material for insulating film suitable as an interlayer insulating material for a semiconductor device, from which an insulating film is formed by chemical vapor deposition, and an insulating film formed from such a material and a semiconductor device employing an insulating film, are provided.A material for insulating film comprising an organosilicon compound which is one of an organosilane compound in which a secondary hydrocarbon group and an alkenyl group, or an alkenyl group, is directly bonded to a silicon atom, or an organosiloxane compound in which a secondary hydrocarbon group and/or an alkenyl group is directly bonded to a silicon atom, represented by the formulae (1) to (4), from which an insulating film is formed by chemical vapor deposition of the organosilicon compound:
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