Invention Grant
US07935462B2 Pattern formation method using levenson-type mask and method of manufacturing levenson-type mask
有权
使用levenson型掩模的图案形成方法和制造levenson型掩模的方法
- Patent Title: Pattern formation method using levenson-type mask and method of manufacturing levenson-type mask
- Patent Title (中): 使用levenson型掩模的图案形成方法和制造levenson型掩模的方法
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Application No.: US12699330Application Date: 2010-02-03
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Publication No.: US07935462B2Publication Date: 2011-05-03
- Inventor: Mitsuru Okuno , Akemi Moniwa
- Applicant: Mitsuru Okuno , Akemi Moniwa
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: McDermott Will & Emery LLP
- Priority: JP2005-361831 20051215
- Main IPC: G03F1/00
- IPC: G03F1/00 ; G03F7/00
Abstract:
A method of forming a pattern including a first pattern portion having a first minimum dimension and a second pattern portion having a second minimum dimension includes a first exposure step of performing exposure using a Levenson-type mask and a second exposure step of performing exposure using a half tone-type mask. When second minimum dimension is 1.3 time or more than the first minimum dimension, the exposure amount of the second exposure step is set to be equal to or smaller than the exposure amount of the first exposure step.
Public/Granted literature
- US20100136487A1 PATTERN FORMATION METHOD USING LEVENSON-TYPE MASK AND METHOD OF MANUFACTURING LEVENSON-TYPE MASK Public/Granted day:2010-06-03
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