Invention Grant
- Patent Title: System and method for self-aligned dual patterning
- Patent Title (中): 用于自对准双重图案化的系统和方法
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Application No.: US12262018Application Date: 2008-10-30
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Publication No.: US07935464B2Publication Date: 2011-05-03
- Inventor: Christopher Siu Wing Ngai
- Applicant: Christopher Siu Wing Ngai
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor & Zafman, LLP
- Main IPC: G03C5/00
- IPC: G03C5/00 ; G03F9/00
Abstract:
A system and a method for self-aligned dual patterning are described. The system includes a platform for supporting a plurality of process chambers. An etch process chamber coupled to the platform. An ultra-violet radiation photo-resist curing process chamber is also coupled to the platform.
Public/Granted literature
- US20100112483A1 SYSTEM AND METHOD FOR SELF-ALIGNED DUAL PATTERNING Public/Granted day:2010-05-06
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