Invention Grant
- Patent Title: Double patterning strategy for contact hole and trench
- Patent Title (中): 接触孔和沟槽的双重图案化策略
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Application No.: US11948444Application Date: 2007-11-30
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Publication No.: US07935477B2Publication Date: 2011-05-03
- Inventor: Feng-Cheng Hsu , Chun-Kuang Chen
- Applicant: Feng-Cheng Hsu , Chun-Kuang Chen
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F7/26
- IPC: G03F7/26
Abstract:
A method of lithography patterning includes forming a first resist pattern on a substrate, the first resist pattern including at least one opening therein on the substrate; curing the first resist pattern; forming a second resist pattern on the substrate; forming a material layer on the substrate; and removing the first and second resist patterns to expose the substrate.
Public/Granted literature
- US20090142701A1 DOUBLE PATTERNING STRATEGY FOR CONTACT HOLE AND TRENCH Public/Granted day:2009-06-04
Information query
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