Invention Grant
US07935545B2 Method and apparatus for performing a site-dependent dual patterning procedure
有权
用于执行位置依赖性双重图案化程序的方法和装置
- Patent Title: Method and apparatus for performing a site-dependent dual patterning procedure
- Patent Title (中): 用于执行位置依赖性双重图案化程序的方法和装置
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Application No.: US11730339Application Date: 2007-03-30
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Publication No.: US07935545B2Publication Date: 2011-05-03
- Inventor: Mark Winkler , Thomas Winter
- Applicant: Mark Winkler , Thomas Winter
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
The present invention includes a method of performing a double-patterning (DP) processing sequence using a plurality of Site-Dependent (S-D) procedures, the method including receiving a first set of wafers by one or more subsystems in a processing system, creating one or more first patterned layers on a first set of patterned wafers, establishing first confidence data for the first set of patterned wafers, establishing a first set of high confidence wafers, creating one or more second patterned layers on a second set of patterned wafers, establishing second confidence data for the second set of patterned wafers and establishing a second set of high confidence wafers.
Public/Granted literature
- US20080241971A1 Method and apparatus for performing a site-dependent dual patterning procedure Public/Granted day:2008-10-02
Information query
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