Invention Grant
- Patent Title: Method of patterning a layer using a pellicle
- Patent Title (中): 使用防护薄膜图案化层的方法
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Application No.: US12279672Application Date: 2006-02-17
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Publication No.: US07935547B2Publication Date: 2011-05-03
- Inventor: Kevin Lucas , Kyle Patterson , Sergei Postnikov
- Applicant: Kevin Lucas , Kyle Patterson , Sergei Postnikov
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- International Application: PCT/EP2006/003293 WO 20060217
- International Announcement: WO2007/093194 WO 20070823
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A method for patterning a layer on a semiconductor substrate includes forming a layer of a semiconductor substrate and exposing the layer to light. The light travels through a second pellicle that is manufactured by a method that includes determining a first transmission of a first light through a first pellicle, wherein the first light is normal to the first pellicle, determining a second transmission of a second light through the first pellicle, wherein the second light is not normal to the first pellicle, and modifying the first pellicle to form a second pellicle using the first and second transmission.
Public/Granted literature
- US20090130865A1 METHOD OF PATTERNING A LAYER USING A PELLICLE Public/Granted day:2009-05-21
Information query
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