Invention Grant
- Patent Title: Deposition apparatus and deposition method
- Patent Title (中): 沉积设备和沉积方法
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Application No.: US12334832Application Date: 2008-12-15
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Publication No.: US07935548B2Publication Date: 2011-05-03
- Inventor: Kazuhito Nishimura , Hideki Sasaoka
- Applicant: Kazuhito Nishimura , Hideki Sasaoka
- Applicant Address: JP Kochi-shi JP Tokyo
- Assignee: Kochi Industrial Promotion Center,Casio Computer Co., Ltd.
- Current Assignee: Kochi Industrial Promotion Center,Casio Computer Co., Ltd.
- Current Assignee Address: JP Kochi-shi JP Tokyo
- Agency: Holtz, Holtz, Goodman & Chick, PC
- Priority: JP2007-325303 20071217
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L21/62
Abstract:
A deposition apparatus includes: a first electrode for placing a processing object; a second electrode for generating plasma with the first electrode, the second electrode being opposed to the first electrode; and a heat flow control heat transfer part for drawing heat from the processing object to generate a heat flow from a central area to a peripheral area of the processing object.
Public/Granted literature
- US20090155934A1 DEPOSITION APPARATUS AND DEPOSITION METHOD Public/Granted day:2009-06-18
Information query
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