Invention Grant
- Patent Title: Seminconductor device
- Patent Title (中): 半导体器件
-
Application No.: US12591983Application Date: 2009-12-07
-
Publication No.: US07935549B2Publication Date: 2011-05-03
- Inventor: Masayuki Furumiya , Yasutaka Nakashiba
- Applicant: Masayuki Furumiya , Yasutaka Nakashiba
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2008-313316 20081209
- Main IPC: H01L21/66
- IPC: H01L21/66
Abstract:
The present invention provides a signal transmitting/receiving method comprising: disposing a ferromagnetic film between a semiconductor device having an inductor and an external device which includes an external inductor provided in a position corresponding to the inductor of the semiconductor device; disposing the inductor and the external inductor so as to face each other via the ferromagnetic film therebetween; and in a state in which the inductor and the external inductor face each other, transmitting and receiving the signals between the inductor and the external inductor by electromagnetic induction.
Public/Granted literature
- US20100144063A1 Seminconductor device Public/Granted day:2010-06-10
Information query
IPC分类:
