The object of this invention is to provide a high-output type nitride light emitting device.The nitride light emitting device comprises an n-type nitride semiconductor layer or layers, a p-type nitride semiconductor layer or layers and an active layer therebetween, wherein a gallium-containing nitride substrate is obtained from a gallium-containing nitride bulk single crystal, provided with an epitaxial growth face with dislocation density of 105/cm2 or less, and A-plane or M-plane which is parallel to C-axis of hexagonal structure for an epitaxial face, wherein the n-type semiconductor layer or layers are formed directly on the A-plane or M-plane.In case that the active layer comprises a nitride semiconductor containing In, an end face film of single crystal AlxGa1-xN (0≦x≦1) can be formed at a low temperature not causing damage to the active layer.