Invention Grant
- Patent Title: Self-converging bottom electrode ring
- Patent Title (中): 自收敛底电极环
-
Application No.: US12036372Application Date: 2008-02-25
-
Publication No.: US07935564B2Publication Date: 2011-05-03
- Inventor: Matthew J. Breitwisch , Chung H. Lam , Hsiang-Lan Lung
- Applicant: Matthew J. Breitwisch , Chung H. Lam , Hsiang-Lan Lung
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Vazken Alexanian
- Agent Ido Tuchman
- Main IPC: H01L47/00
- IPC: H01L47/00

Abstract:
A method and memory cell including self-converged bottom electrode ring. The method includes forming a step spacer, a top insulating layer, an intermediate insulating layer, and a bottom insulating layer above a substrate. The method includes forming a step spacer within the top insulating layer and the intermediate insulating layer. The step spacer size is easily controlled. The method also includes forming a passage in the bottom insulating layer with the step spacer as a mask. The method includes forming bottom electrode ring within the passage comprising a cup-shaped outer conductive layer within the passage and forming an inner insulating layer within the cup-shaped outer conductive layer. The method including forming a phase change layer above the bottom electrode ring and a top electrode above the bottom electrode ring.
Public/Granted literature
- US20090212272A1 SELF-CONVERGING BOTTOM ELECTRODE RING Public/Granted day:2009-08-27
Information query
IPC分类: