Through substrate vias for back-side interconnections on very thin semiconductor wafers

Invention Grant

US07935571B2 Through substrate vias for back-side interconnections on very thin semiconductor wafers 有权

Title translation: 通过用于非常薄的半导体晶片上的背面互连的衬底通孔

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Patent Title: Through substrate vias for back-side interconnections on very thin semiconductor wafers
Patent Title (中): 通过用于非常薄的半导体晶片上的背面互连的衬底通孔
Application No.: US12277512

Application Date: 2008-11-25
Publication No.: US07935571B2

Publication Date: 2011-05-03
Inventor: Chandrasekaram Ramiah , Douglas G. Mitchell , Michael F. Petras , Paul W. Sanders
Applicant: Chandrasekaram Ramiah , Douglas G. Mitchell , Michael F. Petras , Paul W. Sanders
Applicant Address: US TX Austin
Assignee: Freescale Semiconductor, Inc.
Current Assignee: Freescale Semiconductor, Inc.
Current Assignee Address: US TX Austin
Agency: Ingrassia Fisher & Lorenz, P.C.
Main IPC: H01L21/44
IPC: H01L21/44

Through substrate vias for back-side interconnections on very thin semiconductor wafers

Abstract:

Through substrate vias for back-side electrical and thermal interconnections on very thin semiconductor wafers without loss of wafer mechanical strength during manufacturing are provided by: forming (101) desired device regions (21) with contacts (22) on the front surface (19) of an initially relatively thick wafer (18′); etching (104) via cavities (29) partly through the wafer (18′) in the desired locations; filling (105) the via cavities (29) with a conductive material (32) coupled to some device region contacts (22); mounting (106) the wafer (18′) with its front side (35) facing a support structure (40); thinning (107) the wafer (18′) from the back side (181) to expose internal ends (3210, 3220, 3230, 3240, etc.) of the conductive material filled vias (321, 322, 323, 324, etc.); applying (108) any desired back-side interconnect region (44) coupled to the exposed ends (3210, 3220, 3230, 3240, etc.) of the filled vias; removing (109) the support structure (40) and separating the individual device or IC assemblies (48) so as to be available for mounting (110) on a further circuit board, tape or larger circuit (50).

Abstract(Chinese):

通过以下方式提供通过用于在非常薄的半导体晶片上进行背面电气和热互连的衬底通孔，而不会在制造过程中丧失晶片的机械强度：通过在前表面（19）上形成具有触点（22）的期望的器件区域（21）的最初相对较厚的晶片（18'）; 通过腔（29）在期望的位置部分地通过晶片（18'）蚀刻（104）; 通过耦合到一些设备区域触点（22）的导电材料（32）填充（105）所述通孔腔（29）; 安装（106）所述晶片（18'），其前侧（35）面向支撑结构（40）; 从背面（181）将晶片（18'）变薄（107）（107），以暴露导电材料填充的通孔（321,322,323,324等）的内端（3210,3220,3230，3240等））; 施加（108）耦合到所述填充通孔的暴露端（3210,3220,3230,3240等）的任何期望的背面互连区域（44）; 移除（109）支撑结构（40）并分离各个装置或IC组件（48），以便可用于将另一电路板，带或更大的电路（50）安装（110）。

Public/Granted literature

US20100127394A1 THROUGH SUBSTRATE VIAS FOR BACK-SIDE INTERCONNECTIONS ON VERY THIN SEMICONDUCTOR WAFERS Public/Granted day:2010-05-27

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/44	....用H01L21/36至H01L21/428各组不包含的方法或设备在半导体材料上制造电极的