Invention Grant
- Patent Title: Semiconductor device and manufacturing method of the same
- Patent Title (中): 半导体器件及其制造方法相同
-
Application No.: US12285719Application Date: 2008-10-14
-
Publication No.: US07935576B2Publication Date: 2011-05-03
- Inventor: Yutaka Kagaya , Hidehiro Takeshima
- Applicant: Yutaka Kagaya , Hidehiro Takeshima
- Applicant Address: JP Chuo-ku, Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Chuo-ku, Tokyo
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2007-266325 20071012
- Main IPC: H01L21/50
- IPC: H01L21/50

Abstract:
Semiconductor device 10 includes wiring substrate 11 including wiring 14 and wiring 15 in predetermined patterns, semiconductor chips 19 and 23 which are mounted on wiring substrate 11 with electrodes electrically connected to wiring 14 of wiring substrate 11 via wires 21 and 24, first sealing body 25 made of an insulative resin which is formed on a part of wiring substrate 11 and which covers semiconductor chips 19 and 23 and wires 21 and 24, a plurality of connecting connection pads 27 provided on the top surface of first sealing body 25, a plurality of connecting wires 26 which extend from the surface of wiring substrate 11, on which semiconductor chips 19 and 23 are mounted, to the top surface of first sealing body 25 via the side surfaces of first sealing body 25, and which electrically connect wiring 14 of wiring substrate 11 and the plurality of connecting connection pads 27 and second sealing body 28 made of an insulative resin which covers the plurality of connecting wires 26.
Public/Granted literature
- US20090096097A1 Semiconductor device and manufacturing method of the same Public/Granted day:2009-04-16
Information query
IPC分类: