Invention Grant
- Patent Title: Method of fabricating thin film transistor array substrate
- Patent Title (中): 制造薄膜晶体管阵列基板的方法
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Application No.: US11889175Application Date: 2007-08-09
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Publication No.: US07935581B2Publication Date: 2011-05-03
- Inventor: Eui-Hoon Hwang
- Applicant: Eui-Hoon Hwang
- Applicant Address: KR Giheung-Gu, Yongin, Gyunggi-Do
- Assignee: Samsung Mobile Display Co., Ltd.
- Current Assignee: Samsung Mobile Display Co., Ltd.
- Current Assignee Address: KR Giheung-Gu, Yongin, Gyunggi-Do
- Agent Robert E. Bushnell, Esq.
- Priority: KR10-2006-0076297 20060811
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method of fabricating a TFT array substrate that prevents mobile ions from moving from a photoresist to channels of the TFT by the gate electrode of the TFT by performing photolithography processes for ion injection after forming gate electrode of TFT and, in addition, a method of fabricating a TFT array substrate that omits a photolithography process for forming a lower electrode of a storage capacitor by forming the lower electrode of the storage capacitor by a channel doping process for a PMOS TFT.
Public/Granted literature
- US20080038884A1 Method of fabricating thin film transistor array substrate Public/Granted day:2008-02-14
Information query
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