Invention Grant
- Patent Title: Damascene process for carbon memory element with MIIM diode
- Patent Title (中): 具有MIIM二极管的碳记忆元件的镶嵌工艺
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Application No.: US12566486Application Date: 2009-09-24
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Publication No.: US07935594B2Publication Date: 2011-05-03
- Inventor: April Dawn Schricker , Deepak C. Sekar , Andy Fu , Mark Clark
- Applicant: April Dawn Schricker , Deepak C. Sekar , Andy Fu , Mark Clark
- Applicant Address: US CA Milpitas
- Assignee: SanDisk 3D LLC
- Current Assignee: SanDisk 3D LLC
- Current Assignee Address: US CA Milpitas
- Agency: Vierra Magen Marcus & DeNiro LLP
- Main IPC: H01L21/8234
- IPC: H01L21/8234

Abstract:
Forming a metal-insulator diode and carbon memory element in a single damascene process is disclosed. A trench having a bottom and a sidewall is formed in an insulator. A first diode electrode is formed in the trench during a single damascene process. A first insulating region comprising a first insulating material is formed in the trench during the single damascene process. A second insulating region comprising a second insulating material is formed in the trench during the single damascene process. A second diode electrode is formed in the trench during the single damascene process. The first insulating region and the second insulating region reside between the first diode electrode and the second diode electrode to form a metal-insulator-insulator-metal (MIIM) diode. A region of carbon is formed in the trench during the single damascene process. At least a portion of the carbon is electrically in series with the MIIM diode.
Public/Granted literature
- US20100081268A1 DAMASCENE PROCESS FOR CARBON MEMORY ELEMENT WITH MIIM DIODE Public/Granted day:2010-04-01
Information query
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