Invention Grant
- Patent Title: Integrated passive device with a high resistivity substrate and method for forming the same
- Patent Title (中): 具有高电阻率衬底的集成无源器件及其形成方法
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Application No.: US11733063Application Date: 2007-04-09
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Publication No.: US07935607B2Publication Date: 2011-05-03
- Inventor: Jonathan K. Abrokwah , Keri L. Costello , James G. Cotronakis , Terry K. Daly , Jason R. Fender , Adolfo G. Reyes
- Applicant: Jonathan K. Abrokwah , Keri L. Costello , James G. Cotronakis , Terry K. Daly , Jason R. Fender , Adolfo G. Reyes
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
According to one aspect of the present invention, a method of forming a microelectronic assembly, such as an integrated passive device (IPD) (72), is provided. An insulating dielectric layer (32) having a thickness (36) of at least 4 microns is formed over a silicon substrate (20). At least one passive electronic component (62) is formed over the insulating dielectric layer (32).
Public/Granted literature
- US20080246114A1 INTEGRATED PASSIVE DEVICE WITH A HIGH RESISTIVITY SUBSTRATE AND METHOD FOR FORMING THE SAME Public/Granted day:2008-10-09
Information query
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