Invention Grant
- Patent Title: Method to stabilize carbon in Si1-x-yGexCy layers
- Patent Title (中): 在Si1-x-yGexCy层中稳定碳的方法
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Application No.: US10931327Application Date: 2004-08-31
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Publication No.: US07935617B2Publication Date: 2011-05-03
- Inventor: Douglas J. Tweet
- Applicant: Douglas J. Tweet
- Applicant Address: US WA Camas
- Assignee: Sharp Laboratories of America, Inc.
- Current Assignee: Sharp Laboratories of America, Inc.
- Current Assignee Address: US WA Camas
- Agent David C. Ripma
- Main IPC: H01L21/20
- IPC: H01L21/20 ; C30B25/00 ; C30B29/10
Abstract:
A method of providing a layer in a semiconductor device, wherein the layer includes Si1-x-yGexCy, and wherein the carbon in the layer is in a stable condition, includes preparing a silicon substrate; preparing a SiGeC precursor; forming a Si1-x-yGexCy layer on the silicon substrate from the precursor; forming a top silicon layer on the Si1-x-yGexCy layer; and completing the semiconductor device.
Public/Granted literature
- US20060046507A1 Method to stabilize carbon in Si1-x-yGexCy layers Public/Granted day:2006-03-02
Information query
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