Methods and apparatus are described for semiconductor devices. A method comprises providing a partially completed semiconductor device including a substrate, a semiconductor on the substrate, and a passivation layer on the semiconductor, and using a first mask, locally etching the passivation layer to expose a portion of the semiconductor, and without removing the first mask, forming a Schottky contact of a first material on the exposed portion of the semiconductor, then removing the first mask, and using a further mask, forming a step-gate conductor of a second material electrically coupled to the Schottky contact and overlying parts of the passivation layer adjacent to the Schottky contact. By minimizing the process steps between opening the Schottky contact window in the passivation layer and forming the Schottky contact material in this window, the gate leakage of a resulting field effect device having a Schottky gate may be substantially reduced.