Invention Grant
- Patent Title: Ion beam irradiating apparatus, and method of producing semiconductor device
- Patent Title (中): 离子束照射装置及半导体装置的制造方法
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Application No.: US12304241Application Date: 2007-06-12
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Publication No.: US07935944B2Publication Date: 2011-05-03
- Inventor: Junzo Ishikawa , Dan Nicolaescu , Yasuhito Gotoh , Shigeki Sakai
- Applicant: Junzo Ishikawa , Dan Nicolaescu , Yasuhito Gotoh , Shigeki Sakai
- Applicant Address: JP Kyoto JP Kyoto
- Assignee: Kyoto University,Nissin Ion Equipment Co., Ltd.
- Current Assignee: Kyoto University,Nissin Ion Equipment Co., Ltd.
- Current Assignee Address: JP Kyoto JP Kyoto
- Agency: Osha • Liang LLP
- Priority: JP2006-162394 20060612
- International Application: PCT/JP2007/062200 WO 20070612
- International Announcement: WO2007/145355 WO 20071221
- Main IPC: G21G1/10
- IPC: G21G1/10

Abstract:
An ion beam irradiating apparatus has a field emission electron source 10 which is disposed in a vicinity of a path of the ion beam 2, and which emits electrons 12. The field emission electron source 10 is placed in a direction along which an incident angle formed by the electrons 12 emitted from the electron source 10 and a direction parallel to the traveling direction of the ion beam 2 is in the range from −15 deg. to +45 deg. (an inward direction of the ion beam 2 is +, and an outward direction is −).
Public/Granted literature
- US20090203199A1 ION BEAM IRRADIATING APPARATUS, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE Public/Granted day:2009-08-13
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