Invention Grant
US07935952B2 Non-volatile memory device having threshold switching resistor, memory array including the non-volatile memory device and methods of manufacturing the same
有权
具有阈值开关电阻器的非易失性存储器件，包括非易失性存储器件的存储器阵列及其制造方法
- Patent Title: Non-volatile memory device having threshold switching resistor, memory array including the non-volatile memory device and methods of manufacturing the same
- Patent Title (中): 具有阈值开关电阻器的非易失性存储器件，包括非易失性存储器件的存储器阵列及其制造方法
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Application No.: US12073510Application Date: 2008-03-06
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Publication No.: US07935952B2Publication Date: 2011-05-03
- Inventor: Myoung-jae Lee , Young-soo Park , Chang-bum Lee
- Applicant: Myoung-jae Lee , Young-soo Park , Chang-bum Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2007-0028861 20070323
- Main IPC: H01L47/00
- IPC: H01L47/00
Abstract:
Provided are a non-volatile memory device having a threshold switching resistor, a memory array including the non-volatile memory device, and methods of manufacturing the same. A non-volatile memory device having a threshold switching resistor may include a first resistor having threshold switching characteristics, an intermediate electrode on the first resistor, and a second resistor having at least two resistance characteristics on the intermediate electrode.
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