Invention Grant
US07935953B2 Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the same
有权
非易失性存储器件，非易失性存储器件阵列及其制造方法
- Patent Title: Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the same
- Patent Title (中): 非易失性存储器件，非易失性存储器件阵列及其制造方法
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Application No.: US11979432Application Date: 2007-11-02
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Publication No.: US07935953B2Publication Date: 2011-05-03
- Inventor: Seung-Eon Ahn , In-Kyeong Yoo , Young-Soo Joung , Young-Kwan Cha , Myoung-Jae Lee , David Seo , Sun-Ae Seo
- Applicant: Seung-Eon Ahn , In-Kyeong Yoo , Young-Soo Joung , Young-Kwan Cha , Myoung-Jae Lee , David Seo , Sun-Ae Seo
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2004-0091497 20041110
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L23/62
Abstract:
A nonvolatile memory device including a lower electrode, a resistor structure disposed on the lower electrode, a middle electrode disposed on the resistor structure, a diode structure disposed on the middle electrode, and an upper electrode disposed on the diode structure. A nonvolatile memory device wherein the resistor structure includes one resistor and the diode structure includes one diode. An array of nonvolatile memory device as described above. Methods of manufacturing a nonvolatile memory device and an array of nonvolatile memory device.
Public/Granted literature
- US20080121865A1 Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the same Public/Granted day:2008-05-29
Information query
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