Invention Grant
US07935956B2 Optoelectronic device based on compound semiconductor quantum dots in SiGe cladding layers
有权
基于SiGe覆层中化合物半导体量子点的光电器件
- Patent Title: Optoelectronic device based on compound semiconductor quantum dots in SiGe cladding layers
- Patent Title (中): 基于SiGe覆层中化合物半导体量子点的光电器件
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Application No.: US11934033Application Date: 2007-11-01
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Publication No.: US07935956B2Publication Date: 2011-05-03
- Inventor: Ya-Hong Xie
- Applicant: Ya-Hong Xie
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Vista IP Law Group LLP
- Main IPC: H01L33/06
- IPC: H01L33/06 ; H01L33/26 ; H01S5/34
Abstract:
A device having an optically active region includes a silicon substrate and a SiGe cladding layer epitaxially grown on the silicon substrate. The SiGe cladding layer includes a plurality of arrays of quantum dots separated by at least one SiGe spacing layer, the quantum dots being formed from a compound semiconductor material.
Public/Granted literature
- US20080054249A1 QUANTUM DOT BASED OPTOELECTRONIC DEVICE Public/Granted day:2008-03-06
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