Invention Grant
- Patent Title: Nitride semiconductor light emitting diode
- Patent Title (中): 氮化物半导体发光二极管
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Application No.: US12258292Application Date: 2008-10-24
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Publication No.: US07935970B2Publication Date: 2011-05-03
- Inventor: Sang-Yeob Song , Ji Hye Shim , Bum Joon Kim
- Applicant: Sang-Yeob Song , Ji Hye Shim , Bum Joon Kim
- Applicant Address: KR Gyunggi-Do
- Assignee: Samsung LED Co., Ltd.
- Current Assignee: Samsung LED Co., Ltd.
- Current Assignee Address: KR Gyunggi-Do
- Agency: Lowe Hauptman Ham & Berner LLP
- Priority: KR10-2006-0082374 20060829
- Main IPC: H01L27/15
- IPC: H01L27/15
Abstract:
A nitride semiconductor light emitting diode (LED) comprises an n-type nitride semiconductor layer; an electron emitting layer formed on the n-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III; an active layer formed on the electron emitting layer; and a p-type nitride semiconductor layer formed on the active layer.
Public/Granted literature
- US20090095965A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE Public/Granted day:2009-04-16
Information query
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