Invention Grant
- Patent Title: Nitride semiconductor device
- Patent Title (中): 氮化物半导体器件
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Application No.: US11782914Application Date: 2007-07-25
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Publication No.: US07935983B2Publication Date: 2011-05-03
- Inventor: Yasunobu Saito , Wataru Saito , Takao Noda , Tomohiro Nitta
- Applicant: Yasunobu Saito , Wataru Saito , Takao Noda , Tomohiro Nitta
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2006-202782 20060726
- Main IPC: H01L29/15
- IPC: H01L29/15
Abstract:
A nitride semiconductor device includes: a substrate containing Si; a channel layer provided on the substrate and made of nitride semiconductor material; a barrier layer provided on the channel layer and made of nitride semiconductor material; a first and second main electrode connected to the barrier layer; and a control electrode provided between the first main electrode and the second main electrode on the barrier layer. The substrate includes at least one layer having a resistivity of 1 kΩ/cm or more.
Public/Granted literature
- US20080023706A1 NITRIDE SEMICONDUCTOR DEVICE Public/Granted day:2008-01-31
Information query
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