Invention Grant
US07935989B2 Single-electron transistor, field-effect transistor, sensor, method for producing sensor, and sensing method
有权
单电子晶体管，场效应晶体管，传感器，传感器的制造方法和传感方法
- Patent Title: Single-electron transistor, field-effect transistor, sensor, method for producing sensor, and sensing method
- Patent Title (中): 单电子晶体管，场效应晶体管，传感器，传感器的制造方法和传感方法
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Application No.: US10558063Application Date: 2004-05-21
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Publication No.: US07935989B2Publication Date: 2011-05-03
- Inventor: Kazuhiko Matsumoto , Koichi Mukasa , Atsushi Ishii , Seiji Takeda , Makoto Sawamura , Agus Subagyo , Hirotaka Hosoi , Kazuhisa Sueoka , Hiroshi Kida , Yoshihiro Sakoda
- Applicant: Kazuhiko Matsumoto , Koichi Mukasa , Atsushi Ishii , Seiji Takeda , Makoto Sawamura , Agus Subagyo , Hirotaka Hosoi , Kazuhisa Sueoka , Hiroshi Kida , Yoshihiro Sakoda
- Applicant Address: JP Kawaguchi-shi JP Tokyo
- Assignee: Japan Science and Technology Agency,National Institute of Advanced Industrial Science and Technology
- Current Assignee: Japan Science and Technology Agency,National Institute of Advanced Industrial Science and Technology
- Current Assignee Address: JP Kawaguchi-shi JP Tokyo
- Agency: Crowell & Moring LLP
- Priority: JP2003-146480 20030523; JP2004-037866 20040216
- International Application: PCT/JP2004/007300 WO 20040521
- International Announcement: WO2004/104568 WO 20041202
- Main IPC: H01L29/772
- IPC: H01L29/772
Abstract:
A single-electron transistor comprising at least a substrate, a source electrode and a drain electrode formed on top of the substrate opposing to each other, and a channel arranged between the source electrode is disclosed wherein the channel is composed of ultra fine fibers. By having such a constitution, a sensor can have excellent sensitivity.
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