Light shield for CMOS imager

Invention Grant

US07935994B2 Light shield for CMOS imager 有权

Title translation: CMOS成像器的屏蔽

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Patent Title: Light shield for CMOS imager
Patent Title (中): CMOS成像器的屏蔽
Application No.: US11066432

Application Date: 2005-02-24
Publication No.: US07935994B2

Publication Date: 2011-05-03
Inventor: Wen-De Wang , Dun-Nian Yaung , Shou-Gwo Wuu , Chung-Yi Yu
Applicant: Wen-De Wang , Dun-Nian Yaung , Shou-Gwo Wuu , Chung-Yi Yu
Applicant Address: TW Hsin-Chu
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee Address: TW Hsin-Chu
Agency: Slater & Matsil, L.L.P.
Main IPC: H01L31/062
IPC: H01L31/062

Abstract:

System and method for providing a light shield for a CMOS imager is provided. The light shield comprises a structure formed above a point between a photo-sensitive element and adjacent circuitry. The structure is formed of a light-blocking material, such as a metal, metal alloy, metal compound, or the like, formed in dielectric layers over the photo-sensitive elements.

Abstract(Chinese):

提供了一种用于为CMOS成像器提供遮光罩的系统和方法。光屏蔽包括形成在感光元件和相邻电路之间的点之上的结构。该结构由光敏元件上的电介质层中形成的诸如金属，金属合金，金属化合物等的遮光材料形成。

Public/Granted literature

US20060186547A1 Light shield for CMOS imager Public/Granted day:2006-08-24

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L31/00	对红外辐射、光、较短波长的电磁辐射，或微粒辐射敏感的，并且专门适用于把这样的辐射能转换为电能的，或者专门适用于通过这样的辐射进行电能控制的半导体器件；专门适用于制造或处理这些半导体器件或其部件的方法或设备；其零部件（H01L51/42优先；由形成在一共用衬底内或其上的多个固态组件，而不是辐射敏感元件与一个或多个电光源的结合所组成的器件入H01L27/00）
H01L31/04	.用作光伏〔PV〕转换器件（制造中其测试入H01L21/66；制造之后其测试入H02S50/10）
H01L31/06	..以至少有一个电位跃变势垒或表面势垒为特征的
H01L31/062	...只是金属—绝缘体—半导体型势垒的