Invention Grant
- Patent Title: Electronic device and manufacturing method thereof
- Patent Title (中): 电子装置及其制造方法
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Application No.: US11843987Application Date: 2007-08-23
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Publication No.: US07935996B2Publication Date: 2011-05-03
- Inventor: John D. Baniecki , Kazuaki Kurihara , Masatoshi Ishii
- Applicant: John D. Baniecki , Kazuaki Kurihara , Masatoshi Ishii
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2006-228230 20060824; JP2007-069178 20070316
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/8242
Abstract:
In a BST thin film being a capacitor film in a capacitor element, the capacitor film is formed such that two kinds of chemical states of Sr(I) and Sr(II) exist at a portion of which depth is up to 2.5 nm from a surface thereof (surface layer portion of which thickness is 2.5 nm), an average concentration of Sr(I) is set as AC(I), an average concentration of Sr(II) is set as AC(II), and when “R=AC(II)/AC(I)”, a value of “R” is adjusted to be “0” (zero)
Public/Granted literature
- US20080048292A1 ELECTRONIC DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2008-02-28
Information query
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