Invention Grant
US07936009B2 Shielded gate trench FET with an inter-electrode dielectric having a low-k dielectric therein
有权
屏蔽栅沟槽FET，其中具有低k电介质的电极间电介质
- Patent Title: Shielded gate trench FET with an inter-electrode dielectric having a low-k dielectric therein
- Patent Title (中): 屏蔽栅沟槽FET，其中具有低k电介质的电极间电介质
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Application No.: US12170328Application Date: 2008-07-09
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Publication No.: US07936009B2Publication Date: 2011-05-03
- Inventor: James Pan , James J. Murphy
- Applicant: James Pan , James J. Murphy
- Applicant Address: US ME South Portland
- Assignee: Fairchild Semiconductor Corporation
- Current Assignee: Fairchild Semiconductor Corporation
- Current Assignee Address: US ME South Portland
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94
Abstract:
A shielded gate trench field effect transistor (FET) comprises trenches extending into a semiconductor region. A shield electrode is disposed in a bottom portion of each trench. The shield electrode is insulated from the semiconductor region by a shield dielectric. A gate electrode is disposed in each trench over the shield electrode, and an inter-electrode dielectric (IED) comprising a low-k dielectric extends between the shield electrode and the gate electrode.
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