Recessed channel transistors that include pad structures

Invention Grant

US07936012B2 Recessed channel transistors that include pad structures 有权

Title translation: 包括衬垫结构的嵌入式沟道晶体管

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Patent Title: Recessed channel transistors that include pad structures
Patent Title (中): 包括衬垫结构的嵌入式沟道晶体管
Application No.: US12785544

Application Date: 2010-05-24
Publication No.: US07936012B2

Publication Date: 2011-05-03
Inventor: Kyoung-Yong Cho
Applicant: Kyoung-Yong Cho
Applicant Address: KR
Assignee: Samsung Electronics Co., Ltd.
Current Assignee: Samsung Electronics Co., Ltd.
Current Assignee Address: KR
Agency: Myers Bigel Sibley & Sajovec
Priority: KR10-2007-0009243 20070130
Main IPC: H01L29/78
IPC: H01L29/78 ; H01L21/336

Recessed channel transistors that include pad structures

Abstract:

Methods of forming pad structures are provided in which a first contact region and second contact regions are formed in an active region of a substrate. An insulating interlayer is formed on the substrate. The insulating interlayer has a first opening that exposes the first contact region and the second contact regions. First conductive pads are formed in the first opening. Each first conductive pad is in electrical contact with a respective one of the second contact regions. Spacers are formed, where each spacer is on a sidewall of a respective one of the first conductive pads. Finally, a second conductive pad is formed between the first conductive pads and in electrical contact with the first contact region to complete the pad structure.

Abstract(Chinese):

提供了形成衬垫结构的方法，其中第一接触区域和第二接触区域形成在衬底的有源区域中。在基板上形成绝缘中间层。绝缘中间层具有暴露第一接触区域和第二接触区域的第一开口。在第一开口中形成第一导电垫。每个第一导电焊盘与相应的一个第二接触区域电接触。形成间隔物，其中每个间隔物位于相应的一个第一导电焊盘的侧壁上。最后，第二导电焊盘形成在第一导电焊盘之间并与第一接触区域电接触以完成焊盘结构。

Public/Granted literature

US20100227463A1 Methods of Forming Pad Structures and Related Methods of Manufacturing Recessed Channel Transistors that Include Such Pad Structures Public/Granted day:2010-09-09

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76	...单极器件
H01L29/772	....场效应晶体管
H01L29/78	.....由绝缘栅产生场效应的