Methods of operating semiconductor memory devices including magnetic films having electrochemical potential difference therebetween

Invention Grant

US07936030B2 Methods of operating semiconductor memory devices including magnetic films having electrochemical potential difference therebetween 有权

Title translation: 包括其间具有电化学电位差的磁性膜的半导体存储器件的操作方法

Please log in to see more content

Patent Title: Methods of operating semiconductor memory devices including magnetic films having electrochemical potential difference therebetween
Patent Title (中): 包括其间具有电化学电位差的磁性膜的半导体存储器件的操作方法
Application No.: US12923013

Application Date: 2010-08-30
Publication No.: US07936030B2

Publication Date: 2011-05-03
Inventor: Tae-wan Kim , Wan-jun Park , Sang-jin Park , In-jun Hwang , Soon-ju Kwon , Young-keun Kim , Richard J. Gambino
Applicant: Tae-wan Kim , Wan-jun Park , Sang-jin Park , In-jun Hwang , Soon-ju Kwon , Young-keun Kim , Richard J. Gambino
Applicant Address: KR Gyeonggi-Do
Assignee: Samsung Electronics Co., Ltd.
Current Assignee: Samsung Electronics Co., Ltd.
Current Assignee Address: KR Gyeonggi-Do
Agency: Harness, Dickey & Pierce, P.L.C.
Priority: KR10-2004-0060719 20040731
Main IPC: H01L23/02
IPC: H01L23/02

Methods of operating semiconductor memory devices including magnetic films having electrochemical potential difference therebetween

Abstract:

Provided are a multi-purpose magnetic film structure using a spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor memory device. The multi-purpose magnetic film structure includes a lower magnetic film, a tunneling film formed on the lower magnetic film, and an upper magnetic film formed on the tunneling film, wherein the lower and upper magnetic films are ferromagnetic films forming an electrochemical potential difference therebetween when the lower and upper magnetic films have opposite magnetization directions.

Abstract(Chinese):

提供了使用自旋电荷的多用途磁性膜结构，其制造方法，具有该自旋电荷的半导体器件，以及操作半导体存储器件的方法。多用途磁性膜结构包括下部磁性膜，形成在下部磁性膜上的隧道膜和形成在隧道膜上的上部磁性膜，其中下部和上部磁性膜是形成其间电化学电位差的铁磁性膜当上下磁性膜具有相反的磁化方向时。

Public/Granted literature

US20100329001A1 Methods of operating semiconductor memory devices including magnetic films having electrochemical potential difference therebetween Public/Granted day:2010-12-30

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L23/00	半导体或其他固态器件的零部件（H01L25/00优先）
H01L23/02	.容器；封接（H01L23/12，H01L23/34，H01L23/48，H01L23/552优先）