Invention Grant
- Patent Title: Photoelectric conversion element, solid-state image pickup device, and manufacturing method of the photoelectric conversion element
- Patent Title (中): 光电转换元件,固态图像拾取器件以及光电转换元件的制造方法
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Application No.: US12198370Application Date: 2008-08-26
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Publication No.: US07936035B2Publication Date: 2011-05-03
- Inventor: Yoshiki Maehara , Takashi Goto , Kiyohiko Tsutsumi , Kyohei Ogawa , Takashi Komiyama , Takeshi Senga , Takehiro Kasahara
- Applicant: Yoshiki Maehara , Takashi Goto , Kiyohiko Tsutsumi , Kyohei Ogawa , Takashi Komiyama , Takeshi Senga , Takehiro Kasahara
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2007-220012 20070827
- Main IPC: H01L31/00
- IPC: H01L31/00

Abstract:
A photoelectric conversion element comprises: a pair of electrodes; and an organic photoelectric conversion layer between the pair of electrodes, wherein one of the electrodes is a first electrode that collects electrons generated in the organic photoelectric conversion layer; the other one of the electrodes is a second electrode that collects holes generated in the organic photoelectric conversion layer; and the photoelectric conversion element further comprises a hole blocking layer that comprises silicon oxide and inhibits injection of holes into the organic photoelectric conversion layer from the first electrode while applying a bias voltage between the electrodes, the hole blocking layer being disposed between the first electrode and the organic photoelectric conversion layer, and an oxygen/silicon composition ratio of the silicon oxide is 0.5 or greater and 1.2 or less.
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