Invention Grant
- Patent Title: Photoelectric conversion device and manufacturing method of the same, and a semiconductor device
- Patent Title (中): 光电转换装置及其制造方法以及半导体装置
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Application No.: US12355187Application Date: 2009-01-16
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Publication No.: US07936037B2Publication Date: 2011-05-03
- Inventor: Kazuo Nishi , Yuusuke Sugawara , Hironobu Takahashi , Tatsuya Arao
- Applicant: Kazuo Nishi , Yuusuke Sugawara , Hironobu Takahashi , Tatsuya Arao
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2005-042926 20050218; JP2005-121392 20050419
- Main IPC: H01L31/102
- IPC: H01L31/102 ; H01L27/14
Abstract:
A photo-sensor having a structure which can suppress electrostatic discharge damage is provided. Conventionally, a transparent electrode has been formed over the entire surface of a light receiving region; however, in the present invention, the transparent electrode is not formed, and a p-type semiconductor layer and an n-type semiconductor layer of a photoelectric conversion layer are used as an electrode. Therefore, in the photo-sensor according to the present invention, resistance is increased an electrostatic discharge damage can be suppressed. In addition, positions of the p-type semiconductor layer and the n-type semiconductor layer, which serve as an electrode, are kept away; and thus, resistance is increased and withstand voltage can be improved.
Public/Granted literature
- US20090126790A1 PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD OF THE SAME, AND A SEMICONDUCTOR DEVICE Public/Granted day:2009-05-21
Information query
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