Invention Grant
US07936038B2 Photodiode cell structure of photodiode integrated circuit for optical pickup and method of manufacturing the same
有权
用于光学拾取器的光电二极管集成电路的光电二极管单元结构及其制造方法
- Patent Title: Photodiode cell structure of photodiode integrated circuit for optical pickup and method of manufacturing the same
- Patent Title (中): 用于光学拾取器的光电二极管集成电路的光电二极管单元结构及其制造方法
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Application No.: US12464837Application Date: 2009-05-12
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Publication No.: US07936038B2Publication Date: 2011-05-03
- Inventor: Ha Woong Jeong , Kyoung Soo Kwon , Chae Dong Go , Deuk Hee Park
- Applicant: Ha Woong Jeong , Kyoung Soo Kwon , Chae Dong Go , Deuk Hee Park
- Applicant Address: KR Gyunggi-Do
- Assignee: Samsung Electro-Mechanics Co.
- Current Assignee: Samsung Electro-Mechanics Co.
- Current Assignee Address: KR Gyunggi-Do
- Agency: Blakely Sokoloff Taylor & Zafman LLP
- Priority: KR10-2009-0026412 20090327
- Main IPC: H01L31/105
- IPC: H01L31/105
Abstract:
Disclosed herein is a photodiode cell, including: a first-type substrate; a second-type epitaxial layer disposed on the first-type substrate; heavily-doped second-type layers, each having a small depth, formed on the second-type epitaxial layer; and heavily-doped first-type layers, each having a narrow and shallow section, disposed on the second-type epitaxial layer and formed between the heavily-doped second-type layers, wherein the first-type and second-type have opposite doped states.
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