Invention Grant
- Patent Title: Power transistor and power semiconductor device
- Patent Title (中): 功率晶体管和功率半导体器件
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Application No.: US11687041Application Date: 2007-03-16
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Publication No.: US07936048B2Publication Date: 2011-05-03
- Inventor: Ralf Otremba
- Applicant: Ralf Otremba
- Applicant Address: DE Munich
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Munich
- Agency: Banner & Witcoff, Ltd.
- Priority: DE102006012739 20060317
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L23/04
Abstract:
In a power semiconductor device, the vertically conducting power transistor has at its front side (11) a source zone (14) and a control input (16). A feedthrough for the control input has an electrode on the front side (11) and an electrode on the rear side (12), with the result that contact can be made with the control input both from the front side (11) and from the rear side (12).
Public/Granted literature
- US20070219033A1 Power Transistor And Power Semiconductor Device Public/Granted day:2007-09-20
Information query
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