Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12485601Application Date: 2009-06-16
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Publication No.: US07936061B2Publication Date: 2011-05-03
- Inventor: Yoshihiro Machida
- Applicant: Yoshihiro Machida
- Applicant Address: JP Nagano-shi
- Assignee: Shinko Electric Industries Co., Ltd.
- Current Assignee: Shinko Electric Industries Co., Ltd.
- Current Assignee Address: JP Nagano-shi
- Agency: Rankin, Hill & Clark LLP
- Priority: JP2008-158241 20080617
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A semiconductor device includes: a first insulating layer having an opening therethrough; a first wiring pattern disposed on the first insulating layer; an external connection terminal provided on a portion of the first wiring pattern exposed from the opening; a second insulating layer which covers the first wiring pattern and having via holes therethrough; a second wiring pattern disposed within the second insulating layer and electrically connected to the first wiring pattern via a conductive material filled in at least one of the via holes; a semiconductor element having an electrode thereon and mounted on the second insulating layer to be electrically connected to the first wiring pattern through the electrode disposed in at least one of the via holes; an underfill resin filled between the semiconductor element and the second insulating layer; and a sealing resin portion which seals the semiconductor element.
Public/Granted literature
- US20090309231A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2009-12-17
Information query
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