Invention Grant
US07936067B2 Backend interconnect scheme with middle dielectric layer having improved strength
有权
具有中等介电层的后端互连方案具有改进的强度
- Patent Title: Backend interconnect scheme with middle dielectric layer having improved strength
- Patent Title (中): 具有中等介电层的后端互连方案具有改进的强度
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Application No.: US12121541Application Date: 2008-05-15
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Publication No.: US07936067B2Publication Date: 2011-05-03
- Inventor: Hao-Yi Tsai , Yu-Wen Liu , Hsien-Wei Chen , Ying-Ju Chen , Shin-Puu Jeng
- Applicant: Hao-Yi Tsai , Yu-Wen Liu , Hsien-Wei Chen , Ying-Ju Chen , Shin-Puu Jeng
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40
Abstract:
An integrated circuit structure includes a first, a second and a third metallization layer. The first metallization layer includes a first dielectric layer having a first k value; and first metal lines in the first dielectric layer. The second metallization layer is over the first metallization layer, and includes a second dielectric layer having a second k value greater than the first k value; and second metal lines in the second dielectric layer. The third metallization layer is over the second metallization layer, and includes a third dielectric layer having a third k value; and third metal lines in the third dielectric layer. The integrated circuit structure further includes a bottom passivation layer over the third metallization layer.
Public/Granted literature
- US20090283911A1 Backend Interconnect Scheme with Middle Dielectric Layer Having Improved Strength Public/Granted day:2009-11-19
Information query
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